unisonic technologies co., ltd 14n65k-mt preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r502-b11.d 14a, 650v n-channel power mosfet ? description the utc 14n65k-mt is an n-channel enhancement mode power mosfet. the device adopts planar stripe and uses dmos technology to minimize and provide lower on-state resistance and faster switching speed. it can also withstand high energy pulse under the avalanche and commutation mode conditions. the utc 14n65k-mt is ideally suitable for high efficiency switch mode power supply, power factor correction and electronic lamp ballast based on half bridge topology. ? features * r ds(on) < 0.63 ? @ v gs = 10v, i d = 7 a * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain to-220f2 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 14N65KL-TF2-T 14n65kg-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source (1) t: tube (2) tf2: to-220f2 (3) l: lead free, g: halogen free and lead free 14N65KL-TF2-T (1)packing type (2)package type (3)green package ? marking
14n65k-mt preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-b11.d ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v continuous drain current i d 14 a pulsed drain current (note 2) i dm 48 a avalanche current (note 2) i ar 14 a single pulsed avalanche energy (note 3) e as 325 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation (t c =25c) p d 150 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 3.31mh, i as = 14a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 14a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.83 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650v, v gs = 0v 10 a v gs = 30v, v ds = 0v 100 na gate-source leakage current i gss v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250ma,referenced to 25c 0.5 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 7a 0.63 ? dynamic characteristics input capacitance c iss 980 pf output capacitance c oss 185 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 10 pf switching characteristics turn-on delay time t d(on) 89 ns turn-on rise time t r 116 ns turn-off delay time t d(off) 388 ns turn-off fall time t f v ds =30v, i d =0.5a, r g =25 ? (note 1, 2) 145 ns total gate charge q g 47 nc gate-source charge q gs 12.2 nc gate-drain charge q gd v gs =10v, v ds =50v, i d =1.3a (note 1, 2) 11.6 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i s = 14a 1.4 v maximum continuous drain-source diode forward current i s 14 a maximum pulsed drain-source diode forward current i sm 56 a notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating ambient temperature
14n65k-mt preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-b11.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
14n65k-mt preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-b11.d ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circui t gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
14n65k-mt preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-b11.d utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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